Mohamed Faragalla
Angestellt, Senior Mixed Signal Design Engineer, NXP Semiconductors Germany
Abschluss: M.Sc, TU Hamburg-Harburg
Munich, Deutschland
Über mich
Mohamed Faragalla received the B.Sc. degree in Electrical Engineering from Ain Shams University, Egypt, in 2017 and the M.Sc. degree in Microelectronics and Microsystems from Hamburg University of Technology, Germany, in 2019. Since 2019, he is pursuing a Ph.D. degree in Electrical Engineering and Electronics from Hamburg University of Technology, Germany with research focus on implantable electronics In 2022, Mohamed joined NXP Semiconductor as a Mixed Signal Design Engineer. Mohamed was awarded the SICK-Wissenschaftspreise, 2019 for his outstanding M.Sc. thesis from Gisela und Erwin Sick foundation. He also received a one-year scholarship for academic performance from the Free and Hanseatic City of Hamburg in 2018. In 2016, he was with the Center of Nanoelectronics and Devices, the American University in Cairo, as an Research Assistant working on FinFET standard-cell library for synchronous/asynchronous design and physical unclonable functions.
Werdegang
Berufserfahrung von Mohamed Faragalla
Bis heute 1 Jahr und 3 Monate, seit Apr. 2023
Senior Mixed Signal Design Engineer
NXP Semiconductors Germany8 Monate, Aug. 2021 - März 2022
ASIC Design Engineer
implatronic GmbH
2 Jahre und 7 Monate, Sep. 2019 - März 2022
Research Associate
TUHH Technische Universität Hamburg
PhD Candidate, ASIC Designs for Medical Implants
1 Jahr und 2 Monate, Aug. 2018 - Sep. 2019
Research Assistant
Technische Universität Hamburg
Analog IC Designer for Medical Implants at the Institute for Integrated Circuits
6 Monate, Feb. 2018 - Juli 2018
Working Student
GLP systems GmbH
Student Assistant in the field of Hardware/Software Testing. Planning, executing and reporting functionality and throughput tests on laboratory's automation modules.
10 Monate, Juni 2016 - März 2017
Research Assistant
American University in Cairo
As a member of the research team of Center of Nanoelectronics and Devices (CND), I participated in designing and implementing hybrid (synchronous - asynchronous) standard cell library based on 7nm FinFET technology using Cadence Virtuoso. Published paper in ICM16, DOI: 10.1109/ICM.2016.7847881
Ausbildung von Mohamed Faragalla
Bis heute 4 Jahre und 10 Monate, seit Sep. 2019
Electrical Engineering
TU Hamburg-Harburg
Development of an electronic implant for invasive blood pressure/flow monitoring
1 Jahr und 11 Monate, Okt. 2017 - Aug. 2019
Microelectronics and Microsystems
TU Hamburg-Harburg
Grade: Passed with Distinction, average grade of 1.2, and ranked first.Grade: Passed with Distinction, average grade of 1.2, and ranked first. Activities and societies: MSc Thesis: Electronic Concepts for Medical Implants
4 Jahre und 11 Monate, Sep. 2012 - Juli 2017
Electrical Engineering
Faculty of Engineering, Ain Shams University
Grade: Very Good with Honor DegreeGrade: Very Good with Honor Degree Graduation Project/B.Sc. Thesis: FinFET SRAM-based Physical Unclonable Functions. Under supervision of Prof. Hani Fikry (ICL – Ain Shams University), Prof. Wael Fikry (Physics Dept. – Ain Shams University), and Dr. Eslam Yahya (CND – The American University in Cairo) IEEE Published Paper, DOI: 10.1109/ICCES.2017.8275272
Sprachen
Englisch
Fließend
Arabisch
Muttersprache